STMicroelectronics, Type N-Channel Trench Gate Field Stop IGBT, 10 A 600 V, 3-Pin TO-252, Surface
Технически документи
Спецификации
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
10A
Product Type
Trench Gate Field Stop IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
88W
Package Type
TO-252
Mount Type
Surface
Channel Type
Type N
Pin Count
3
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
1.95V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Length
6.6mm
Height
2.4mm
Standards/Approvals
RoHS
Series
H
Energy Rating
221mJ
Automotive Standard
No
Страна на произход
China
Детайли за продукта
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Информацията за складовите наличности временно не е налична.
€ 1 146,44
€ 0,459 Each (On a Reel of 2500) (ex VAT)
2500
€ 1 146,44
€ 0,459 Each (On a Reel of 2500) (ex VAT)
Информацията за складовите наличности временно не е налична.
2500
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
10A
Product Type
Trench Gate Field Stop IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
88W
Package Type
TO-252
Mount Type
Surface
Channel Type
Type N
Pin Count
3
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
1.95V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Length
6.6mm
Height
2.4mm
Standards/Approvals
RoHS
Series
H
Energy Rating
221mJ
Automotive Standard
No
Страна на произход
China
Детайли за продукта
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products