STMicroelectronics, Type N-Channel IGBT, 20 A 600 V, 3-Pin TO-263, Surface

Номер на артикул на RS: 795-7041PМарка: STMicroelectronics№ по каталога на производителя: STGB10NC60HDT4
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Преглед на всички в IGBTs

Технически документи

Спецификации

Brand

STMicroelectronics

Product Type

IGBT

Maximum Continuous Collector Current Ic

20A

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

65W

Package Type

TO-263

Mount Type

Surface

Channel Type

Type N

Pin Count

3

Switching Speed

1MHz

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2.5V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

9.35 mm

Length

10.4mm

Height

4.6mm

Standards/Approvals

RoHS

Automotive Standard

No

Детайли за продукта

IGBT Discretes, STMicroelectronics

IGBT Discretes & Modules, STMicroelectronics

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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Преглед на всички в IGBTs

Информацията за складовите наличности временно не е налична.

€ 47,59

€ 1,904 Each (Supplied on a Reel) (ex VAT)

STMicroelectronics, Type N-Channel IGBT, 20 A 600 V, 3-Pin TO-263, Surface
Изберете тип опаковка

Производствен пакет (Ролка)

Изберете тип опаковка

Стандарт - each

Предлагат се на бройка по 5.

Производство -

Предлагат се на бройка по 5.

Препоръчва се за поръчки в големи количества. Артикулите са опаковани готови за поставяне в машини, което Ви позволява да подобрите ефективността на производството.

25

Предлагат се на бройка по 5
25€ 47,59
30€ 57,11
35€ 66,63
40€ 76,14
45€ 85,66
50€ 85,74
55€ 94,32
60€ 102,89
65€ 111,46
70€ 120,04
75€ 128,61
80€ 137,19
85€ 145,76
90€ 154,34
95€ 162,91

€ 47,59

€ 1,904 Each (Supplied on a Reel) (ex VAT)

STMicroelectronics, Type N-Channel IGBT, 20 A 600 V, 3-Pin TO-263, Surface

Информацията за складовите наличности временно не е налична.

Изберете тип опаковка

Производствен пакет (Ролка)

Изберете тип опаковка

Стандарт - each

Предлагат се на бройка по 5.

Производство -

Предлагат се на бройка по 5.

Препоръчва се за поръчки в големи количества. Артикулите са опаковани готови за поставяне в машини, което Ви позволява да подобрите ефективността на производството.

25

Предлагат се на бройка по 5
25€ 47,59
30€ 57,11
35€ 66,63
40€ 76,14
45€ 85,66
50€ 85,74
55€ 94,32
60€ 102,89
65€ 111,46
70€ 120,04
75€ 128,61
80€ 137,19
85€ 145,76
90€ 154,34
95€ 162,91

количествоЕдинична ценаPer Ролка
25 - 45€ 1,904€ 9,52
50 - 120€ 1,715€ 8,57
125 - 245€ 1,538€ 7,69
250+€ 1,464€ 7,32

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

STMicroelectronics

Product Type

IGBT

Maximum Continuous Collector Current Ic

20A

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

65W

Package Type

TO-263

Mount Type

Surface

Channel Type

Type N

Pin Count

3

Switching Speed

1MHz

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2.5V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

9.35 mm

Length

10.4mm

Height

4.6mm

Standards/Approvals

RoHS

Automotive Standard

No

Детайли за продукта

IGBT Discretes, STMicroelectronics

IGBT Discretes & Modules, STMicroelectronics

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more