Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
3.5 A
Maximum Drain Source Voltage
1000 V
Package Type
TO-220FP
Series
MDmesh, SuperMESH
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.7 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
42 nC @ 10 V
Width
4.6mm
Height
9.3mm
Minimum Operating Temperature
-55 °C
Детайли за продукта
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 5,38
€ 2,688 Each (In a Pack of 2) (ex VAT)
Стандарт
2
€ 5,38
€ 2,688 Each (In a Pack of 2) (ex VAT)
Стандарт
2
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
количество | Единична цена | Per Опаковка |
---|---|---|
2 - 8 | € 2,688 | € 5,38 |
10 - 98 | € 2,273 | € 4,55 |
100 - 498 | € 1,817 | € 3,64 |
500 - 998 | € 1,619 | € 3,24 |
1000+ | € 1,367 | € 2,74 |
Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
3.5 A
Maximum Drain Source Voltage
1000 V
Package Type
TO-220FP
Series
MDmesh, SuperMESH
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.7 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
42 nC @ 10 V
Width
4.6mm
Height
9.3mm
Minimum Operating Temperature
-55 °C
Детайли за продукта