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SiC N-Channel MOSFET Module, 30 A, 600 V Depletion, 3-Pin TO-220FP STMicroelectronics STF36N60M6

Номер на артикул на RS: 202-5511Марка: STMicroelectronics№ по каталога на производителя: STF36N60M6
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

600 V

Series

ST

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.085 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

4.75V

Transistor Material

SiC

Number of Elements per Chip

1

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Информацията за складовите наличности временно не е налична.

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€ 3,369

Each (In a Tube of 50) (ex VAT)

SiC N-Channel MOSFET Module, 30 A, 600 V Depletion, 3-Pin TO-220FP STMicroelectronics STF36N60M6

€ 3,369

Each (In a Tube of 50) (ex VAT)

SiC N-Channel MOSFET Module, 30 A, 600 V Depletion, 3-Pin TO-220FP STMicroelectronics STF36N60M6
Информацията за складовите наличности временно не е налична.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

600 V

Series

ST

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.085 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

4.75V

Transistor Material

SiC

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more