STMicroelectronics MDmesh N-Channel MOSFET, 17 A, 650 V, 3-Pin TO-220FP STF24NM60N

Номер на артикул на RS: 168-7540Марка: STMicroelectronics№ по каталога на производителя: STF24NM60N
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

17 A

Maximum Drain Source Voltage

650 V

Series

MDmesh

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

30 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

4.6mm

Length

10.4mm

Typical Gate Charge @ Vgs

46 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

16.4mm

Детайли за продукта

N-Channel MDmesh™, 600V/650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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€ 117,66

€ 2,353 Each (In a Tube of 50) (ex VAT)

STMicroelectronics MDmesh N-Channel MOSFET, 17 A, 650 V, 3-Pin TO-220FP STF24NM60N

€ 117,66

€ 2,353 Each (In a Tube of 50) (ex VAT)

STMicroelectronics MDmesh N-Channel MOSFET, 17 A, 650 V, 3-Pin TO-220FP STF24NM60N

Информацията за складовите наличности временно не е налична.

Информацията за складовите наличности временно не е налична.

количествоЕдинична ценаPer Тръба
50 - 50€ 2,353€ 117,66
100 - 450€ 1,947€ 97,35
500 - 950€ 1,896€ 94,81
1000 - 4950€ 1,847€ 92,33
5000+€ 1,80€ 90,02

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

17 A

Maximum Drain Source Voltage

650 V

Series

MDmesh

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

30 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

4.6mm

Length

10.4mm

Typical Gate Charge @ Vgs

46 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

16.4mm

Детайли за продукта

N-Channel MDmesh™, 600V/650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more