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STMicroelectronics MDmesh N-Channel MOSFET, 12 A, 500 V, 3-Pin TO-220FP STF14NM50N

Номер на артикул на RS: 168-7569Марка: STMicroelectronics№ по каталога на производителя: STF14NM50N
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

500 V

Series

MDmesh

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

320 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Number of Elements per Chip

1

Width

4.6mm

Length

10.4mm

Typical Gate Charge @ Vgs

27 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Height

16.4mm

Детайли за продукта

N-Channel MDmesh™, 500V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Информацията за складовите наличности временно не е налична.

€ 95,62

€ 1,912 Each (In a Tube of 50) (ex VAT)

STMicroelectronics MDmesh N-Channel MOSFET, 12 A, 500 V, 3-Pin TO-220FP STF14NM50N

€ 95,62

€ 1,912 Each (In a Tube of 50) (ex VAT)

STMicroelectronics MDmesh N-Channel MOSFET, 12 A, 500 V, 3-Pin TO-220FP STF14NM50N
Информацията за складовите наличности временно не е налична.

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

количествоЕдинична ценаPer Тръба
50 - 50€ 1,912€ 95,62
100 - 200€ 1,549€ 77,44
250+€ 1,394€ 69,69

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

500 V

Series

MDmesh

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

320 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Number of Elements per Chip

1

Width

4.6mm

Length

10.4mm

Typical Gate Charge @ Vgs

27 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Height

16.4mm

Детайли за продукта

N-Channel MDmesh™, 500V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more