STMicroelectronics FDmesh Type N-Channel FDmesh II Power MOSFET, 10 A, 600 V Enhancement, 3-Pin TO-220FP

Номер на артикул на RS: 168-7567Марка: STMicroelectronics№ по каталога на производителя: STF11NM60ND
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Технически документи

Спецификации

Product Type

FDmesh II Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

10A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-220FP

Series

FDmesh

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

0.45Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±25 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

30nC

Maximum Power Dissipation Pd

90W

Forward Voltage Vf

1.3V

Maximum Operating Temperature

150°C

Width

4.6 mm

Height

16.4mm

Length

10.4mm

Standards/Approvals

No

Automotive Standard

No

Детайли за продукта

N-Channel FDmesh™ Power MOSFET, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Информацията за складовите наличности временно не е налична.

€ 105,41

€ 2,108 Each (In a Tube of 50) (ex VAT)

STMicroelectronics FDmesh Type N-Channel FDmesh II Power MOSFET, 10 A, 600 V Enhancement, 3-Pin TO-220FP

€ 105,41

€ 2,108 Each (In a Tube of 50) (ex VAT)

STMicroelectronics FDmesh Type N-Channel FDmesh II Power MOSFET, 10 A, 600 V Enhancement, 3-Pin TO-220FP

Информацията за складовите наличности временно не е налична.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Product Type

FDmesh II Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

10A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-220FP

Series

FDmesh

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

0.45Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±25 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

30nC

Maximum Power Dissipation Pd

90W

Forward Voltage Vf

1.3V

Maximum Operating Temperature

150°C

Width

4.6 mm

Height

16.4mm

Length

10.4mm

Standards/Approvals

No

Automotive Standard

No

Детайли за продукта

N-Channel FDmesh™ Power MOSFET, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more