STMicroelectronics Type N-Channel MOSFET, 40 A, 600 V Enhancement, 4-Pin ISOTOP

Номер на артикул на RS: 103-1568Марка: STMicroelectronics№ по каталога на производителя: STE40NC60
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Технически документи

Спецификации

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

600V

Package Type

ISOTOP

Mount Type

Panel

Pin Count

4

Maximum Drain Source Resistance Rds

130mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

307.5nC

Maximum Power Dissipation Pd

460W

Maximum Gate Source Voltage Vgs

±30 V

Minimum Operating Temperature

-65°C

Forward Voltage Vf

1.3V

Maximum Operating Temperature

150°C

Width

25.5 mm

Length

38.2mm

Height

9.1mm

Standards/Approvals

No

Automotive Standard

No

Детайли за продукта

N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Информацията за складовите наличности временно не е налична.

€ 306,85

€ 30,685 Each (In a Tube of 10) (ex VAT)

STMicroelectronics Type N-Channel MOSFET, 40 A, 600 V Enhancement, 4-Pin ISOTOP

€ 306,85

€ 30,685 Each (In a Tube of 10) (ex VAT)

STMicroelectronics Type N-Channel MOSFET, 40 A, 600 V Enhancement, 4-Pin ISOTOP

Информацията за складовите наличности временно не е налична.

количествоЕдинична ценаPer Тръба
10 - 40€ 30,685€ 306,84
50 - 90€ 29,304€ 293,04
100 - 190€ 25,837€ 258,37
200 - 490€ 24,118€ 241,18
500+€ 22,399€ 223,99

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

600V

Package Type

ISOTOP

Mount Type

Panel

Pin Count

4

Maximum Drain Source Resistance Rds

130mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

307.5nC

Maximum Power Dissipation Pd

460W

Maximum Gate Source Voltage Vgs

±30 V

Minimum Operating Temperature

-65°C

Forward Voltage Vf

1.3V

Maximum Operating Temperature

150°C

Width

25.5 mm

Length

38.2mm

Height

9.1mm

Standards/Approvals

No

Automotive Standard

No

Детайли за продукта

N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more