Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
25 V
Package Type
DPAK (TO-252)
Series
STripFET V
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
7 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
70 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Typical Gate Charge @ Vgs
13.4 nC @ 5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.6mm
Width
6.2mm
Transistor Material
Si
Height
2.4mm
Minimum Operating Temperature
-55 °C
Детайли за продукта
N-Channel STripFET™ V, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 7,00
€ 1,399 Each (In a Pack of 5) (ex VAT)
Стандарт
5
€ 7,00
€ 1,399 Each (In a Pack of 5) (ex VAT)
Стандарт
5
Купете в насипно състояние
количество | Единична цена | Per Опаковка |
---|---|---|
5 - 20 | € 1,399 | € 7,00 |
25 - 45 | € 1,33 | € 6,65 |
50 - 120 | € 1,194 | € 5,97 |
125 - 245 | € 1,079 | € 5,39 |
250+ | € 1,024 | € 5,12 |
Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
25 V
Package Type
DPAK (TO-252)
Series
STripFET V
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
7 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
70 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Typical Gate Charge @ Vgs
13.4 nC @ 5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.6mm
Width
6.2mm
Transistor Material
Si
Height
2.4mm
Minimum Operating Temperature
-55 °C
Детайли за продукта
N-Channel STripFET™ V, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.