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N-Channel MOSFET, 80 A, 25 V, 3-Pin DPAK STMicroelectronics STD95N2LH5

Номер на артикул на RS: 165-6678Марка: STMicroelectronics№ по каталога на производителя: STD95N2LH5
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

25 V

Series

STripFET V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

7 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

70 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

6.6mm

Typical Gate Charge @ Vgs

13.4 nC @ 5 V

Width

6.2mm

Minimum Operating Temperature

-55 °C

Height

2.4mm

Детайли за продукта

N-Channel STripFET™ V, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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€ 1 533,87

€ 0,614 Each (On a Reel of 2500) (ex VAT)

N-Channel MOSFET, 80 A, 25 V, 3-Pin DPAK STMicroelectronics STD95N2LH5

€ 1 533,87

€ 0,614 Each (On a Reel of 2500) (ex VAT)

N-Channel MOSFET, 80 A, 25 V, 3-Pin DPAK STMicroelectronics STD95N2LH5
Информацията за складовите наличности временно не е налична.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

25 V

Series

STripFET V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

7 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

70 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

6.6mm

Typical Gate Charge @ Vgs

13.4 nC @ 5 V

Width

6.2mm

Minimum Operating Temperature

-55 °C

Height

2.4mm

Детайли за продукта

N-Channel STripFET™ V, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more