STMicroelectronics DeepGate, STripFET N-Channel MOSFET, 80 A, 40 V, 3-Pin DPAK STD80N4F6

Номер на артикул на RS: 791-9308Марка: STMicroelectronics№ по каталога на производителя: STD80N4F6
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

40 V

Series

DeepGate, STripFET

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

70 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.2mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.6mm

Typical Gate Charge @ Vgs

36 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

2.4mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

N-Channel STripFET™ DeepGate™, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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€ 9,49

€ 0,949 Each (In a Pack of 10) (ex VAT)

STMicroelectronics DeepGate, STripFET N-Channel MOSFET, 80 A, 40 V, 3-Pin DPAK STD80N4F6
Изберете тип опаковка

€ 9,49

€ 0,949 Each (In a Pack of 10) (ex VAT)

STMicroelectronics DeepGate, STripFET N-Channel MOSFET, 80 A, 40 V, 3-Pin DPAK STD80N4F6

Информацията за складовите наличности временно не е налична.

Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

количествоЕдинична ценаPer Опаковка
10 - 40€ 0,949€ 9,49
50 - 90€ 0,901€ 9,01
100 - 240€ 0,819€ 8,19
250 - 490€ 0,798€ 7,98
500+€ 0,779€ 7,78

Ideate. Create. Collaborate

JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

40 V

Series

DeepGate, STripFET

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

70 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.2mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.6mm

Typical Gate Charge @ Vgs

36 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

2.4mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

N-Channel STripFET™ DeepGate™, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more