STMicroelectronics STripFET F3 Type N-Channel MOSFET, 80 A, 55 V Enhancement, 3-Pin TO-252

Номер на артикул на RS: 168-7727Марка: STMicroelectronics№ по каталога на производителя: STD65N55F3
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Технически документи

Спецификации

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-252

Series

STripFET F3

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

8.5mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.5V

Maximum Power Dissipation Pd

110W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

33.5nC

Maximum Operating Temperature

175°C

Width

6.2 mm

Height

2.4mm

Length

6.6mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

Страна на произход

China

Детайли за продукта

N-Channel STripFET™ F3, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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Информацията за складовите наличности временно не е налична.

€ 3 056,42

€ 1,223 Each (On a Reel of 2500) (ex VAT)

STMicroelectronics STripFET F3 Type N-Channel MOSFET, 80 A, 55 V Enhancement, 3-Pin TO-252

€ 3 056,42

€ 1,223 Each (On a Reel of 2500) (ex VAT)

STMicroelectronics STripFET F3 Type N-Channel MOSFET, 80 A, 55 V Enhancement, 3-Pin TO-252

Информацията за складовите наличности временно не е налична.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-252

Series

STripFET F3

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

8.5mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.5V

Maximum Power Dissipation Pd

110W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

33.5nC

Maximum Operating Temperature

175°C

Width

6.2 mm

Height

2.4mm

Length

6.6mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

Страна на произход

China

Детайли за продукта

N-Channel STripFET™ F3, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more