Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
80A
Maximum Drain Source Voltage Vds
55V
Package Type
TO-252
Series
STripFET F3
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
8.5mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.5V
Maximum Power Dissipation Pd
110W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
33.5nC
Maximum Operating Temperature
175°C
Width
6.2 mm
Height
2.4mm
Length
6.6mm
Standards/Approvals
No
Automotive Standard
AEC-Q101
Страна на произход
China
Детайли за продукта
N-Channel STripFET™ F3, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Информацията за складовите наличности временно не е налична.
€ 3 056,42
€ 1,223 Each (On a Reel of 2500) (ex VAT)
2500
€ 3 056,42
€ 1,223 Each (On a Reel of 2500) (ex VAT)
Информацията за складовите наличности временно не е налична.
2500
Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
80A
Maximum Drain Source Voltage Vds
55V
Package Type
TO-252
Series
STripFET F3
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
8.5mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.5V
Maximum Power Dissipation Pd
110W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
33.5nC
Maximum Operating Temperature
175°C
Width
6.2 mm
Height
2.4mm
Length
6.6mm
Standards/Approvals
No
Automotive Standard
AEC-Q101
Страна на произход
China
Детайли за продукта
N-Channel STripFET™ F3, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


