STMicroelectronics STripFET II Type N-Channel MOSFET, 60 A, 60 V Enhancement, 3-Pin TO-252 STD60NF06T4

Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
60A
Maximum Drain Source Voltage Vds
60V
Package Type
TO-252
Series
STripFET II
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
16mΩ
Channel Mode
Enhancement
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
49nC
Forward Voltage Vf
1.3V
Maximum Power Dissipation Pd
110W
Maximum Gate Source Voltage Vgs
20 V
Maximum Operating Temperature
175°C
Length
6.6mm
Standards/Approvals
No
Width
6.2 mm
Height
2.4mm
Automotive Standard
No
Детайли за продукта
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Информацията за складовите наличности временно не е налична.
€ 9,91
€ 1,982 Each (In a Pack of 5) (ex VAT)
Стандарт
5
€ 9,91
€ 1,982 Each (In a Pack of 5) (ex VAT)
Информацията за складовите наличности временно не е налична.
Стандарт
5
| количество | Единична цена | Per Опаковка |
|---|---|---|
| 5 - 5 | € 1,982 | € 9,91 |
| 10 - 95 | € 1,70 | € 8,50 |
| 100 - 495 | € 1,265 | € 6,32 |
| 500 - 995 | € 1,07 | € 5,35 |
| 1000+ | € 0,859 | € 4,30 |
Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
60A
Maximum Drain Source Voltage Vds
60V
Package Type
TO-252
Series
STripFET II
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
16mΩ
Channel Mode
Enhancement
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
49nC
Forward Voltage Vf
1.3V
Maximum Power Dissipation Pd
110W
Maximum Gate Source Voltage Vgs
20 V
Maximum Operating Temperature
175°C
Length
6.6mm
Standards/Approvals
No
Width
6.2 mm
Height
2.4mm
Automotive Standard
No
Детайли за продукта
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

