N-Channel MOSFET, 2 A, 800 V, 3-Pin DPAK STMicroelectronics STD2N80K5

Номер на артикул на RS: 829-7072Марка: STMicroelectronics№ по каталога на производителя: STD2N80K5
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

2 A

Maximum Drain Source Voltage

800 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

4.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

45 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.6mm

Typical Gate Charge @ Vgs

9.5 nC @ 10 V

Width

6.2mm

Transistor Material

Si

Series

MDmesh K5, SuperMESH5

Minimum Operating Temperature

-55 °C

Height

2.4mm

Детайли за продукта

N-channel MDmesh™ K5 series, SuperMESH5™, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Информацията за складовите наличности временно не е налична.

Запитване за цена

Each (In a Pack of 5) (ex VAT)

N-Channel MOSFET, 2 A, 800 V, 3-Pin DPAK STMicroelectronics STD2N80K5
Изберете тип опаковка

Запитване за цена

Each (In a Pack of 5) (ex VAT)

N-Channel MOSFET, 2 A, 800 V, 3-Pin DPAK STMicroelectronics STD2N80K5

Информацията за складовите наличности временно не е налична.

Изберете тип опаковка

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

2 A

Maximum Drain Source Voltage

800 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

4.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

45 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.6mm

Typical Gate Charge @ Vgs

9.5 nC @ 10 V

Width

6.2mm

Transistor Material

Si

Series

MDmesh K5, SuperMESH5

Minimum Operating Temperature

-55 °C

Height

2.4mm

Детайли за продукта

N-channel MDmesh™ K5 series, SuperMESH5™, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more