STMicroelectronics STripFET II Type N-Channel MOSFET, 25 A, 100 V Enhancement, 3-Pin TO-252 STD25NF10LT4

Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
25A
Maximum Drain Source Voltage Vds
100V
Package Type
TO-252
Series
STripFET II
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
35mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.5V
Maximum Power Dissipation Pd
100W
Maximum Gate Source Voltage Vgs
16 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
38nC
Maximum Operating Temperature
175°C
Standards/Approvals
No
Width
6.2 mm
Height
2.4mm
Length
6.6mm
Automotive Standard
No
Детайли за продукта
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Информацията за складовите наличности временно не е налична.
€ 8,98
€ 1,797 Each (In a Pack of 5) (ex VAT)
Стандарт
5
€ 8,98
€ 1,797 Each (In a Pack of 5) (ex VAT)
Информацията за складовите наличности временно не е налична.
Стандарт
5
| количество | Единична цена | Per Опаковка |
|---|---|---|
| 5 - 5 | € 1,797 | € 8,98 |
| 10 - 20 | € 1,524 | € 7,62 |
| 25 - 95 | € 1,469 | € 7,34 |
| 100 - 495 | € 1,173 | € 5,87 |
| 500+ | € 1,075 | € 5,37 |
Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
25A
Maximum Drain Source Voltage Vds
100V
Package Type
TO-252
Series
STripFET II
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
35mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.5V
Maximum Power Dissipation Pd
100W
Maximum Gate Source Voltage Vgs
16 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
38nC
Maximum Operating Temperature
175°C
Standards/Approvals
No
Width
6.2 mm
Height
2.4mm
Length
6.6mm
Automotive Standard
No
Детайли за продукта
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

