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STMicroelectronics MDmesh M2 N-Channel MOSFET, 12 A, 600 V, 3-Pin DPAK STD16N60M2

Номер на артикул на RS: 165-5379Марка: STMicroelectronics№ по каталога на производителя: STD16N60M2
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

600 V

Series

MDmesh M2

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

320 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Number of Elements per Chip

1

Width

6.2mm

Length

6.6mm

Typical Gate Charge @ Vgs

19 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.6V

Height

2.4mm

Страна на произход

China

Детайли за продукта

N-channel MDmesh™ M2 Series, STMicroelectronics

A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).

MOSFET Transistors, STMicroelectronics

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Информацията за складовите наличности временно не е налична.

€ 2 082,61

€ 0,833 Each (On a Reel of 2500) (ex VAT)

STMicroelectronics MDmesh M2 N-Channel MOSFET, 12 A, 600 V, 3-Pin DPAK STD16N60M2

€ 2 082,61

€ 0,833 Each (On a Reel of 2500) (ex VAT)

STMicroelectronics MDmesh M2 N-Channel MOSFET, 12 A, 600 V, 3-Pin DPAK STD16N60M2
Информацията за складовите наличности временно не е налична.

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

600 V

Series

MDmesh M2

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

320 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Number of Elements per Chip

1

Width

6.2mm

Length

6.6mm

Typical Gate Charge @ Vgs

19 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.6V

Height

2.4mm

Страна на произход

China

Детайли за продукта

N-channel MDmesh™ M2 Series, STMicroelectronics

A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more