STMicroelectronics STripFET Type P-Channel MOSFET, 10 A, 60 V Enhancement, 3-Pin TO-252

Номер на артикул на RS: 165-8005Марка: STMicroelectronics№ по каталога на производителя: STD10P6F6
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Технически документи

Спецификации

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

10A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-252

Series

STripFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

160mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

30W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

6.4nC

Forward Voltage Vf

-1.1V

Maximum Operating Temperature

175°C

Width

7.45 mm

Height

2.38mm

Length

6.6mm

Standards/Approvals

No

Automotive Standard

No

Страна на произход

China

Детайли за продукта

P-Channel STripFET™ Power MOSFET, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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Информацията за складовите наличности временно не е налична.

€ 1 009,84

€ 0,404 Each (On a Reel of 2500) (ex VAT)

STMicroelectronics STripFET Type P-Channel MOSFET, 10 A, 60 V Enhancement, 3-Pin TO-252

€ 1 009,84

€ 0,404 Each (On a Reel of 2500) (ex VAT)

STMicroelectronics STripFET Type P-Channel MOSFET, 10 A, 60 V Enhancement, 3-Pin TO-252

Информацията за складовите наличности временно не е налична.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

10A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-252

Series

STripFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

160mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

30W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

6.4nC

Forward Voltage Vf

-1.1V

Maximum Operating Temperature

175°C

Width

7.45 mm

Height

2.38mm

Length

6.6mm

Standards/Approvals

No

Automotive Standard

No

Страна на произход

China

Детайли за продукта

P-Channel STripFET™ Power MOSFET, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more