STMicroelectronics STripFET H7 N-Channel MOSFET, 80 A, 100 V, 3-Pin DPAK STD100N10F7

Номер на артикул на RS: 786-3592PМарка: STMicroelectronics№ по каталога на производителя: STD100N10F7
brand-logo
Преглед на всички в MOSFETs

Технически документи

Спецификации

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

100 V

Series

STripFET H7

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

120 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

6.6mm

Typical Gate Charge @ Vgs

61 nC @ 10 V

Maximum Operating Temperature

+175 °C

Width

6.2mm

Height

2.4mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

N-Channel STripFET™ H7 Series, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Информацията за складовите наличности временно не е налична.

€ 8,59

€ 1,717 Each (Supplied on a Reel) (ex VAT)

STMicroelectronics STripFET H7 N-Channel MOSFET, 80 A, 100 V, 3-Pin DPAK STD100N10F7
Изберете тип опаковка

Производствен пакет (Ролка)

Изберете тип опаковка

Стандарт - each

Предлагат се на бройка по 5.

Производство -

Предлагат се на бройка по 5.

Препоръчва се за поръчки в големи количества. Артикулите са опаковани готови за поставяне в машини, което Ви позволява да подобрите ефективността на производството.

5

Предлагат се на бройка по 5
5€ 8,59
10€ 17,17
15€ 25,76
20€ 34,35
25€ 42,93
30€ 51,52
35€ 60,10
40€ 68,69
45€ 77,28
50€ 85,86
55€ 94,45
60€ 103,04
65€ 111,62
70€ 120,21
75€ 128,80

€ 8,59

€ 1,717 Each (Supplied on a Reel) (ex VAT)

STMicroelectronics STripFET H7 N-Channel MOSFET, 80 A, 100 V, 3-Pin DPAK STD100N10F7

Информацията за складовите наличности временно не е налична.

Изберете тип опаковка

Производствен пакет (Ролка)

Изберете тип опаковка

Стандарт - each

Предлагат се на бройка по 5.

Производство -

Предлагат се на бройка по 5.

Препоръчва се за поръчки в големи количества. Артикулите са опаковани готови за поставяне в машини, което Ви позволява да подобрите ефективността на производството.

5

Предлагат се на бройка по 5
5€ 8,59
10€ 17,17
15€ 25,76
20€ 34,35
25€ 42,93
30€ 51,52
35€ 60,10
40€ 68,69
45€ 77,28
50€ 85,86
55€ 94,45
60€ 103,04
65€ 111,62
70€ 120,21
75€ 128,80

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

100 V

Series

STripFET H7

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

120 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

6.6mm

Typical Gate Charge @ Vgs

61 nC @ 10 V

Maximum Operating Temperature

+175 °C

Width

6.2mm

Height

2.4mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

N-Channel STripFET™ H7 Series, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more