STMicroelectronics N-Channel MOSFET, 80 A, 55 V, 3-Pin D2PAK STB80NF55-06T4

Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
55 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
6.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
9.35mm
Length
10.4mm
Typical Gate Charge @ Vgs
142 nC @ 10 V
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Height
4.37mm
€ 17,13
€ 3,425 Each (In a Pack of 5) (ex VAT)
Стандарт
5
€ 17,13
€ 3,425 Each (In a Pack of 5) (ex VAT)
Информацията за складовите наличности временно не е налична.
Стандарт
5
Информацията за складовите наличности временно не е налична.
| количество | Единична цена | Per Опаковка |
|---|---|---|
| 5 - 20 | € 3,425 | € 17,13 |
| 25 - 45 | € 3,218 | € 16,09 |
| 50 - 120 | € 3,046 | € 15,23 |
| 125 - 245 | € 2,877 | € 14,39 |
| 250+ | € 2,745 | € 13,72 |
Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
55 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
6.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
9.35mm
Length
10.4mm
Typical Gate Charge @ Vgs
142 nC @ 10 V
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Height
4.37mm

