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N-Channel MOSFET, 70 A, 30 V, 3-Pin D2PAK STMicroelectronics STB70NF3LLT4

Номер на артикул на RS: 168-7480Марка: STMicroelectronics№ по каталога на производителя: STB70NF3LLT4
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

70 A

Maximum Drain Source Voltage

30 V

Series

STripFET F3

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

12 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

100 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Width

10.4mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10.75mm

Typical Gate Charge @ Vgs

24 nC @ 4.5 V

Height

4.6mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

N-Channel STripFET™ F3, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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P.O.A.

N-Channel MOSFET, 70 A, 30 V, 3-Pin D2PAK STMicroelectronics STB70NF3LLT4

P.O.A.

N-Channel MOSFET, 70 A, 30 V, 3-Pin D2PAK STMicroelectronics STB70NF3LLT4
Информацията за складовите наличности временно не е налична.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

70 A

Maximum Drain Source Voltage

30 V

Series

STripFET F3

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

12 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

100 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Width

10.4mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10.75mm

Typical Gate Charge @ Vgs

24 nC @ 4.5 V

Height

4.6mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

N-Channel STripFET™ F3, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more