STMicroelectronics STripFET II Type N-Channel MOSFET, 60 A, 60 V Enhancement, 3-Pin TO-263 STB60NF06LT4

Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
60A
Maximum Drain Source Voltage Vds
60V
Package Type
TO-263
Series
STripFET II
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
14mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.3V
Maximum Power Dissipation Pd
110W
Maximum Gate Source Voltage Vgs
15 V
Minimum Operating Temperature
-65°C
Typical Gate Charge Qg @ Vgs
35nC
Maximum Operating Temperature
175°C
Length
10.4mm
Standards/Approvals
No
Width
9.35 mm
Height
4.6mm
Automotive Standard
AEC-Q101
Детайли за продукта
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Информацията за складовите наличности временно не е налична.
€ 9,97
€ 1,994 Each (In a Pack of 5) (ex VAT)
Стандарт
5
€ 9,97
€ 1,994 Each (In a Pack of 5) (ex VAT)
Информацията за складовите наличности временно не е налична.
Стандарт
5
| количество | Единична цена | Per Опаковка |
|---|---|---|
| 5 - 20 | € 1,994 | € 9,97 |
| 25 - 45 | € 1,893 | € 9,46 |
| 50 - 120 | € 1,703 | € 8,51 |
| 125 - 245 | € 1,531 | € 7,65 |
| 250+ | € 1,457 | € 7,29 |
Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
60A
Maximum Drain Source Voltage Vds
60V
Package Type
TO-263
Series
STripFET II
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
14mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.3V
Maximum Power Dissipation Pd
110W
Maximum Gate Source Voltage Vgs
15 V
Minimum Operating Temperature
-65°C
Typical Gate Charge Qg @ Vgs
35nC
Maximum Operating Temperature
175°C
Length
10.4mm
Standards/Approvals
No
Width
9.35 mm
Height
4.6mm
Automotive Standard
AEC-Q101
Детайли за продукта
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

