Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
35A
Maximum Drain Source Voltage Vds
710V
Package Type
TO-263
Series
MDmesh M5
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
78mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
82nC
Forward Voltage Vf
1.5V
Maximum Power Dissipation Pd
210W
Maximum Gate Source Voltage Vgs
25 V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Length
10.4mm
Standards/Approvals
No
Width
9.35 mm
Height
4.6mm
Automotive Standard
No
Страна на произход
China
Детайли за продукта
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
Информацията за складовите наличности временно не е налична.
€ 6,07
€ 6,07 Всеки (ex VAT)
Стандарт
1
€ 6,07
€ 6,07 Всеки (ex VAT)
Информацията за складовите наличности временно не е налична.
Стандарт
1
Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
35A
Maximum Drain Source Voltage Vds
710V
Package Type
TO-263
Series
MDmesh M5
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
78mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
82nC
Forward Voltage Vf
1.5V
Maximum Power Dissipation Pd
210W
Maximum Gate Source Voltage Vgs
25 V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Length
10.4mm
Standards/Approvals
No
Width
9.35 mm
Height
4.6mm
Automotive Standard
No
Страна на произход
China
Детайли за продукта
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.


