STMicroelectronics MDmesh M5 Type N-Channel MOSFET, 35 A, 710 V Enhancement, 3-Pin TO-263

Номер на артикул на RS: 168-7612Марка: STMicroelectronics№ по каталога на производителя: STB45N65M5
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Технически документи

Спецификации

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

35A

Maximum Drain Source Voltage Vds

710V

Package Type

TO-263

Series

MDmesh M5

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

78mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

210W

Maximum Gate Source Voltage Vgs

25 V

Forward Voltage Vf

1.5V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

82nC

Maximum Operating Temperature

150°C

Width

9.35 mm

Height

4.6mm

Length

10.4mm

Standards/Approvals

No

Automotive Standard

No

Страна на произход

China

Детайли за продукта

N-channel MDmesh™ M5 Series, STMicroelectronics

The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.

MOSFET Transistors, STMicroelectronics

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Информацията за складовите наличности временно не е налична.

€ 4 482,37

€ 4,482 Each (On a Reel of 1000) (ex VAT)

STMicroelectronics MDmesh M5 Type N-Channel MOSFET, 35 A, 710 V Enhancement, 3-Pin TO-263

€ 4 482,37

€ 4,482 Each (On a Reel of 1000) (ex VAT)

STMicroelectronics MDmesh M5 Type N-Channel MOSFET, 35 A, 710 V Enhancement, 3-Pin TO-263

Информацията за складовите наличности временно не е налична.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

35A

Maximum Drain Source Voltage Vds

710V

Package Type

TO-263

Series

MDmesh M5

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

78mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

210W

Maximum Gate Source Voltage Vgs

25 V

Forward Voltage Vf

1.5V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

82nC

Maximum Operating Temperature

150°C

Width

9.35 mm

Height

4.6mm

Length

10.4mm

Standards/Approvals

No

Automotive Standard

No

Страна на произход

China

Детайли за продукта

N-channel MDmesh™ M5 Series, STMicroelectronics

The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more