STMicroelectronics ST SiC N-Channel MOSFET Module, 25 A, 600 V Depletion, 3-Pin D2PAK STB33N60DM6

Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
600 V
Series
ST
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.115 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
4.75V
Transistor Material
SiC
Number of Elements per Chip
1
€ 14,01
€ 7,007 Each (In a Pack of 2) (ex VAT)
Стандарт
2
€ 14,01
€ 7,007 Each (In a Pack of 2) (ex VAT)
Информацията за складовите наличности временно не е налична.
Стандарт
2
Информацията за складовите наличности временно не е налична.
| количество | Единична цена | Per Опаковка |
|---|---|---|
| 2 - 48 | € 7,007 | € 14,01 |
| 50 - 98 | € 5,001 | € 10,00 |
| 100 - 248 | € 4,807 | € 9,62 |
| 250 - 498 | € 4,699 | € 9,40 |
| 500+ | € 4,569 | € 9,14 |
Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
600 V
Series
ST
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.115 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
4.75V
Transistor Material
SiC
Number of Elements per Chip
1

