STMicroelectronics MDmesh DM2 Type N-Channel MOSFET, 12 A, 600 V Enhancement, 3-Pin TO-263

Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
12A
Maximum Drain Source Voltage Vds
600V
Package Type
TO-263
Series
MDmesh DM2
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
290mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.3V
Maximum Power Dissipation Pd
90W
Maximum Gate Source Voltage Vgs
25 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
20nC
Maximum Operating Temperature
150°C
Length
9.35mm
Standards/Approvals
No
Width
10.4 mm
Height
4.6mm
Automotive Standard
No
Страна на произход
China
Детайли за продукта
N-Channel MDmesh DM2 Series, STMicroelectronics
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
High dV/dt capability for improved system reliability
AEC-Q101 qualified
MOSFET Transistors, STMicroelectronics
Информацията за складовите наличности временно не е налична.
€ 1 239,76
€ 1,24 Each (On a Reel of 1000) (ex VAT)
1000
€ 1 239,76
€ 1,24 Each (On a Reel of 1000) (ex VAT)
Информацията за складовите наличности временно не е налична.
1000
Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
12A
Maximum Drain Source Voltage Vds
600V
Package Type
TO-263
Series
MDmesh DM2
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
290mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.3V
Maximum Power Dissipation Pd
90W
Maximum Gate Source Voltage Vgs
25 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
20nC
Maximum Operating Temperature
150°C
Length
9.35mm
Standards/Approvals
No
Width
10.4 mm
Height
4.6mm
Automotive Standard
No
Страна на произход
China
Детайли за продукта
N-Channel MDmesh DM2 Series, STMicroelectronics
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
High dV/dt capability for improved system reliability
AEC-Q101 qualified

