STMicroelectronics STripFET II N-Channel MOSFET, 120 A, 100 V, 3-Pin D2PAK STB120NF10T4

Номер на артикул на RS: 687-5065PМарка: STMicroelectronics№ по каталога на производителя: STB120NF10T4
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

100 V

Series

STripFET II

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

10.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

312 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

172 nC @ 10 V

Width

9.35mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Maximum Operating Temperature

+175 °C

Height

4.6mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

N-Channel STripFET™ II, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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Информацията за складовите наличности временно не е налична.

€ 36,55

€ 3,655 Each (Supplied on a Reel) (ex VAT)

STMicroelectronics STripFET II N-Channel MOSFET, 120 A, 100 V, 3-Pin D2PAK STB120NF10T4
Изберете тип опаковка

€ 36,55

€ 3,655 Each (Supplied on a Reel) (ex VAT)

STMicroelectronics STripFET II N-Channel MOSFET, 120 A, 100 V, 3-Pin D2PAK STB120NF10T4

Информацията за складовите наличности временно не е налична.

Изберете тип опаковка

количествоЕдинична ценаPer Ролка
10 - 24€ 3,655€ 7,31
26 - 98€ 3,466€ 6,93
100 - 498€ 2,779€ 5,56
500+€ 2,458€ 4,92

Ideate. Create. Collaborate

JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Click here to find out more

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

100 V

Series

STripFET II

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

10.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

312 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

172 nC @ 10 V

Width

9.35mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Maximum Operating Temperature

+175 °C

Height

4.6mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

N-Channel STripFET™ II, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more