STMicroelectronics STB11NM80 Type N-Channel MDmesh Power MOSFET, 11 A, 800 V Enhancement, 3-Pin TO-263

Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
MDmesh Power MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
11A
Maximum Drain Source Voltage Vds
800V
Package Type
TO-263
Series
STB11NM80
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
0.4Ω
Channel Mode
Enhancement
Maximum Power Dissipation Pd
150W
Maximum Gate Source Voltage Vgs
±30 V
Minimum Operating Temperature
-65°C
Typical Gate Charge Qg @ Vgs
43.6nC
Forward Voltage Vf
0.86V
Maximum Operating Temperature
150°C
Width
9.35 mm
Height
4.37mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Информацията за складовите наличности временно не е налична.
€ 3 211,01
€ 3,211 Each (On a Reel of 1000) (ex VAT)
1000
€ 3 211,01
€ 3,211 Each (On a Reel of 1000) (ex VAT)
Информацията за складовите наличности временно не е налична.
1000
Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
MDmesh Power MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
11A
Maximum Drain Source Voltage Vds
800V
Package Type
TO-263
Series
STB11NM80
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
0.4Ω
Channel Mode
Enhancement
Maximum Power Dissipation Pd
150W
Maximum Gate Source Voltage Vgs
±30 V
Minimum Operating Temperature
-65°C
Typical Gate Charge Qg @ Vgs
43.6nC
Forward Voltage Vf
0.86V
Maximum Operating Temperature
150°C
Width
9.35 mm
Height
4.37mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No

