STMicroelectronics G-HEMT P-Channel Power MOSFET, 6 A, 700 V Enhancement, 2-Pin TO-252 SGT350R70GTK

Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
P-Channel
Product Type
Power MOSFET
Maximum Continuous Drain Current Id
6A
Maximum Drain Source Voltage Vds
700V
Series
G-HEMT
Package Type
TO-252
Mount Type
Surface Mount
Pin Count
2
Maximum Drain Source Resistance Rds
350mΩ
Channel Mode
Enhancement
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
1.5nC
Maximum Power Dissipation Pd
47W
Maximum Operating Temperature
150°C
Length
6.2mm
Height
2.4mm
Страна на произход
China
Информацията за складовите наличности временно не е налична.
€ 0,75
€ 0,75 Всеки (ex VAT)
1
€ 0,75
€ 0,75 Всеки (ex VAT)
Информацията за складовите наличности временно не е налична.
1
Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
P-Channel
Product Type
Power MOSFET
Maximum Continuous Drain Current Id
6A
Maximum Drain Source Voltage Vds
700V
Series
G-HEMT
Package Type
TO-252
Mount Type
Surface Mount
Pin Count
2
Maximum Drain Source Resistance Rds
350mΩ
Channel Mode
Enhancement
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
1.5nC
Maximum Power Dissipation Pd
47W
Maximum Operating Temperature
150°C
Length
6.2mm
Height
2.4mm
Страна на произход
China

