STMicroelectronics G-HEMT P-Channel Power MOSFET, 6 A, 700 V Enhancement, 2-Pin TO-252 SGT350R70GTK

Номер на артикул на RS: 719-637Марка: STMicroelectronics№ по каталога на производителя: SGT350R70GTK
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Технически документи

Спецификации

Brand

STMicroelectronics

Product Type

Power MOSFET

Channel Type

P-Channel

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

700V

Package Type

TO-252

Series

G-HEMT

Mount Type

Surface Mount

Pin Count

2

Maximum Drain Source Resistance Rds

350mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

1.5nC

Maximum Power Dissipation Pd

47W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

6.2mm

Height

2.4mm

Страна на произход

China

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Преглед на всички в MOSFETs

Информацията за складовите наличности временно не е налична.

€ 1 752,86

€ 0,701 Each (On a Reel of 2500) (ex VAT)

STMicroelectronics G-HEMT P-Channel Power MOSFET, 6 A, 700 V Enhancement, 2-Pin TO-252 SGT350R70GTK

2500

Предлагат се на бройка по 2500
2500€ 1 752,86
5000€ 3 505,73
7500€ 5 258,59
10000€ 7 011,46
12500€ 8 764,32
15000€ 10 517,19
17500€ 12 270,05
20000€ 14 022,91
22500€ 15 775,78
25000€ 17 528,64
27500€ 19 281,51
30000€ 21 034,37
32500€ 22 787,24
35000€ 24 540,10
37500€ 26 292,96

€ 1 752,86

€ 0,701 Each (On a Reel of 2500) (ex VAT)

STMicroelectronics G-HEMT P-Channel Power MOSFET, 6 A, 700 V Enhancement, 2-Pin TO-252 SGT350R70GTK

Информацията за складовите наличности временно не е налична.

2500

Предлагат се на бройка по 2500
2500€ 1 752,86
5000€ 3 505,73
7500€ 5 258,59
10000€ 7 011,46
12500€ 8 764,32
15000€ 10 517,19
17500€ 12 270,05
20000€ 14 022,91
22500€ 15 775,78
25000€ 17 528,64
27500€ 19 281,51
30000€ 21 034,37
32500€ 22 787,24
35000€ 24 540,10
37500€ 26 292,96

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

STMicroelectronics

Product Type

Power MOSFET

Channel Type

P-Channel

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

700V

Package Type

TO-252

Series

G-HEMT

Mount Type

Surface Mount

Pin Count

2

Maximum Drain Source Resistance Rds

350mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

1.5nC

Maximum Power Dissipation Pd

47W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

6.2mm

Height

2.4mm

Страна на произход

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more