STMicroelectronics G-HEMT P-Channel Transistor, 29 A, 700 V Enhancement, 8-Pin PowerFLAT SGT080R70ILB

Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
Transistor
Channel Type
P-Channel
Maximum Continuous Drain Current Id
29A
Maximum Drain Source Voltage Vds
700V
Package Type
PowerFLAT
Series
G-HEMT
Mount Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance Rds
80mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
6.2nC
Maximum Power Dissipation Pd
188W
Maximum Gate Source Voltage Vgs
-6 to 7 V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Width
8.1 mm
Length
8.1mm
Height
0.9mm
Страна на произход
China
Информацията за складовите наличности временно не е налична.
€ 2,22
€ 2,22 Всеки (ex VAT)
1
€ 2,22
€ 2,22 Всеки (ex VAT)
Информацията за складовите наличности временно не е налична.
1
Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
Transistor
Channel Type
P-Channel
Maximum Continuous Drain Current Id
29A
Maximum Drain Source Voltage Vds
700V
Package Type
PowerFLAT
Series
G-HEMT
Mount Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance Rds
80mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
6.2nC
Maximum Power Dissipation Pd
188W
Maximum Gate Source Voltage Vgs
-6 to 7 V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Width
8.1 mm
Length
8.1mm
Height
0.9mm
Страна на произход
China

