Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
125 V
Package Type
M174
Mounting Type
Surface Mount
Pin Count
4
Channel Mode
Enhancement
Maximum Power Dissipation
389 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
24.89mm
Transistor Material
Si
Number of Elements per Chip
1
Length
26.67mm
Maximum Operating Temperature
+200 °C
Height
4.11mm
Детайли за продукта
RF MOSFET Transistors, STMicroelectronics
The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.
MOSFET Transistors, STMicroelectronics
€ 78,40
€ 78,40 Всеки (ex VAT)
Стандарт
1
€ 78,40
€ 78,40 Всеки (ex VAT)
Стандарт
1
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
количество | Единична цена |
---|---|
1 - 4 | € 78,40 |
5 - 9 | € 76,84 |
10 - 14 | € 74,48 |
15 - 19 | € 73,69 |
20+ | € 72,91 |
Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
125 V
Package Type
M174
Mounting Type
Surface Mount
Pin Count
4
Channel Mode
Enhancement
Maximum Power Dissipation
389 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
24.89mm
Transistor Material
Si
Number of Elements per Chip
1
Length
26.67mm
Maximum Operating Temperature
+200 °C
Height
4.11mm
Детайли за продукта
RF MOSFET Transistors, STMicroelectronics
The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.