Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
125 V
Package Type
M174
Mounting Type
Surface Mount
Pin Count
4
Channel Mode
Enhancement
Maximum Power Dissipation
389 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
24.89mm
Number of Elements per Chip
1
Maximum Operating Temperature
+200 °C
Transistor Material
Si
Length
26.67mm
Height
4.11mm
Детайли за продукта
RF MOSFET Transistors, STMicroelectronics
The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.
MOSFET Transistors, STMicroelectronics
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 70,762
Each (In a Tray of 25) (ex VAT)
25
€ 70,762
Each (In a Tray of 25) (ex VAT)
25
Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
125 V
Package Type
M174
Mounting Type
Surface Mount
Pin Count
4
Channel Mode
Enhancement
Maximum Power Dissipation
389 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
24.89mm
Number of Elements per Chip
1
Maximum Operating Temperature
+200 °C
Transistor Material
Si
Length
26.67mm
Height
4.11mm
Детайли за продукта
RF MOSFET Transistors, STMicroelectronics
The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.