STMicroelectronics SCTWA90N65G2V-4 Type N-Channel MOSFET, 119 A, 650 V Enhancement, 4-Pin Hip-247

Номер на артикул на RS: 213-3943Марка: STMicroelectronics№ по каталога на производителя: SCTWA90N65G2V-4
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Преглед на всички в MOSFETs

Технически документи

Спецификации

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

119A

Maximum Drain Source Voltage Vds

650V

Package Type

Hip-247

Series

SCTWA90N65G2V-4

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

24mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

656W

Maximum Gate Source Voltage Vgs

22 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

157nC

Forward Voltage Vf

2.5V

Maximum Operating Temperature

200°C

Width

21.1 mm

Height

5.1mm

Length

15.9mm

Standards/Approvals

No

Automotive Standard

No

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Преглед на всички в MOSFETs

Информацията за складовите наличности временно не е налична.

€ 801,55

€ 26,718 Each (In a Tube of 30) (ex VAT)

STMicroelectronics SCTWA90N65G2V-4 Type N-Channel MOSFET, 119 A, 650 V Enhancement, 4-Pin Hip-247

30

Предлагат се на бройка по 30
30€ 801,55
60€ 1 603,11
90€ 2 404,66
120€ 3 206,21
150€ 4 007,76
180€ 4 809,32
210€ 5 610,87
240€ 6 412,42
270€ 7 213,98
300€ 8 015,53
330€ 8 817,08
360€ 9 618,64
390€ 10 420,19
420€ 11 221,74
450€ 12 023,29

€ 801,55

€ 26,718 Each (In a Tube of 30) (ex VAT)

STMicroelectronics SCTWA90N65G2V-4 Type N-Channel MOSFET, 119 A, 650 V Enhancement, 4-Pin Hip-247

Информацията за складовите наличности временно не е налична.

30

Предлагат се на бройка по 30
30€ 801,55
60€ 1 603,11
90€ 2 404,66
120€ 3 206,21
150€ 4 007,76
180€ 4 809,32
210€ 5 610,87
240€ 6 412,42
270€ 7 213,98
300€ 8 015,53
330€ 8 817,08
360€ 9 618,64
390€ 10 420,19
420€ 11 221,74
450€ 12 023,29

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

119A

Maximum Drain Source Voltage Vds

650V

Package Type

Hip-247

Series

SCTWA90N65G2V-4

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

24mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

656W

Maximum Gate Source Voltage Vgs

22 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

157nC

Forward Voltage Vf

2.5V

Maximum Operating Temperature

200°C

Width

21.1 mm

Height

5.1mm

Length

15.9mm

Standards/Approvals

No

Automotive Standard

No

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more