STMicroelectronics SCTWA35N65G2V Type N-Channel SiC Power Module, 45 A, 650 V Enhancement, 3-Pin Hip-247

Номер на артикул на RS: 204-3957Марка: STMicroelectronics№ по каталога на производителя: SCTWA35N65G2V
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Технически документи

Спецификации

Brand

STMicroelectronics

Product Type

SiC Power Module

Channel Type

Type N

Maximum Continuous Drain Current Id

45A

Maximum Drain Source Voltage Vds

650V

Package Type

Hip-247

Series

SCTWA35N65G2V

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

0.072Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

240W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

73nC

Forward Voltage Vf

3.3V

Maximum Operating Temperature

200°C

Width

5.1 mm

Height

41.2mm

Length

15.9mm

Standards/Approvals

No

Automotive Standard

No

Страна на произход

China

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Преглед на всички в MOSFETs

Информацията за складовите наличности временно не е налична.

€ 343,39

€ 11,446 Each (In a Tube of 30) (ex VAT)

STMicroelectronics SCTWA35N65G2V Type N-Channel SiC Power Module, 45 A, 650 V Enhancement, 3-Pin Hip-247

30

Предлагат се на бройка по 30
30€ 343,39
60€ 686,77
90€ 1 030,16
120€ 1 373,54
150€ 1 716,93
180€ 2 060,32
210€ 2 403,70
240€ 2 747,09
270€ 3 090,47
300€ 3 433,86
330€ 3 777,24
360€ 4 120,63
390€ 4 464,02
420€ 4 807,40
450€ 5 150,79

€ 343,39

€ 11,446 Each (In a Tube of 30) (ex VAT)

STMicroelectronics SCTWA35N65G2V Type N-Channel SiC Power Module, 45 A, 650 V Enhancement, 3-Pin Hip-247

Информацията за складовите наличности временно не е налична.

30

Предлагат се на бройка по 30
30€ 343,39
60€ 686,77
90€ 1 030,16
120€ 1 373,54
150€ 1 716,93
180€ 2 060,32
210€ 2 403,70
240€ 2 747,09
270€ 3 090,47
300€ 3 433,86
330€ 3 777,24
360€ 4 120,63
390€ 4 464,02
420€ 4 807,40
450€ 5 150,79

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

STMicroelectronics

Product Type

SiC Power Module

Channel Type

Type N

Maximum Continuous Drain Current Id

45A

Maximum Drain Source Voltage Vds

650V

Package Type

Hip-247

Series

SCTWA35N65G2V

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

0.072Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

240W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

73nC

Forward Voltage Vf

3.3V

Maximum Operating Temperature

200°C

Width

5.1 mm

Height

41.2mm

Length

15.9mm

Standards/Approvals

No

Automotive Standard

No

Страна на произход

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more