STMicroelectronics SCTWA35N65G2V SiC N-Channel SiC Power Module, 45 A, 650 V, 3-Pin HiP247 SCTWA35N65G2V
Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
45 A
Maximum Drain Source Voltage
650 V
Series
SCTWA35N65G2V
Package Type
Hip247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.072 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.2V
Number of Elements per Chip
1
Transistor Material
SiC
Страна на произход
China
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Информацията за складовите наличности временно не е налична.
€ 345,01
€ 11,50 Each (In a Tube of 30) (ex VAT)
30
€ 345,01
€ 11,50 Each (In a Tube of 30) (ex VAT)
Информацията за складовите наличности временно не е налична.
30
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
45 A
Maximum Drain Source Voltage
650 V
Series
SCTWA35N65G2V
Package Type
Hip247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.072 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.2V
Number of Elements per Chip
1
Transistor Material
SiC
Страна на произход
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products