STMicroelectronics Type N-Channel MOSFET, 45 A, 1200 V Enhancement, 3-Pin Hip-247

Номер на артикул на RS: 907-4741PМарка: STMicroelectronics№ по каталога на производителя: SCT30N120
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Технически документи

Спецификации

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

45A

Maximum Drain Source Voltage Vds

1200V

Package Type

Hip-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

100mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

270W

Maximum Gate Source Voltage Vgs

25 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

105nC

Forward Voltage Vf

3.5V

Maximum Operating Temperature

200°C

Width

5.15 mm

Height

20.15mm

Length

15.75mm

Standards/Approvals

No

Automotive Standard

No

Детайли за продукта

N-Channel Silicon Carbide (SiC) MOSFET, STMicroelectronics

Silicon carbide (SiC) MOSFETs feature very low static drain-source on-resistance for the 1200V rating combined with excellent switching performance, translating into more efficient and compact systems.

MOSFET Transistors, STMicroelectronics

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Преглед на всички в MOSFETs

Информацията за складовите наличности временно не е налична.

€ 91,40

€ 18,28 Each (Supplied in a Tube) (ex VAT)

STMicroelectronics Type N-Channel MOSFET, 45 A, 1200 V Enhancement, 3-Pin Hip-247
Изберете тип опаковка

€ 91,40

€ 18,28 Each (Supplied in a Tube) (ex VAT)

STMicroelectronics Type N-Channel MOSFET, 45 A, 1200 V Enhancement, 3-Pin Hip-247

Информацията за складовите наличности временно не е налична.

Изберете тип опаковка

количествоЕдинична цена
5 - 9€ 18,28
10 - 24€ 16,46
25+€ 16,35

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

45A

Maximum Drain Source Voltage Vds

1200V

Package Type

Hip-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

100mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

270W

Maximum Gate Source Voltage Vgs

25 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

105nC

Forward Voltage Vf

3.5V

Maximum Operating Temperature

200°C

Width

5.15 mm

Height

20.15mm

Length

15.75mm

Standards/Approvals

No

Automotive Standard

No

Детайли за продукта

N-Channel Silicon Carbide (SiC) MOSFET, STMicroelectronics

Silicon carbide (SiC) MOSFETs feature very low static drain-source on-resistance for the 1200V rating combined with excellent switching performance, translating into more efficient and compact systems.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more