STMicroelectronics Type N-Channel MOSFET, 45 A, 1200 V Enhancement, 3-Pin Hip-247 SCT30N120

Номер на артикул на RS: 907-4741Марка: STMicroelectronics№ по каталога на производителя: SCT30N120
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Преглед на всички в MOSFETs

Технически документи

Спецификации

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

45A

Maximum Drain Source Voltage Vds

1200V

Package Type

Hip-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

100mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

105nC

Maximum Power Dissipation Pd

270W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

3.5V

Maximum Operating Temperature

200°C

Length

15.75mm

Height

20.15mm

Standards/Approvals

No

Automotive Standard

No

Детайли за продукта

N-Channel Silicon Carbide (SiC) MOSFET, STMicroelectronics

Silicon carbide (SiC) MOSFETs feature very low static drain-source on-resistance for the 1200V rating combined with excellent switching performance, translating into more efficient and compact systems.

MOSFET Transistors, STMicroelectronics

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Преглед на всички в MOSFETs

Информацията за складовите наличности временно не е налична.

€ 14,62

€ 14,62 Всеки (ex VAT)

STMicroelectronics Type N-Channel MOSFET, 45 A, 1200 V Enhancement, 3-Pin Hip-247 SCT30N120
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Препоръчва се за поръчки в големи количества. Артикулите са опаковани готови за поставяне в машини, което Ви позволява да подобрите ефективността на производството.

1

Предлагат се на бройка по 1
1€ 14,62
2€ 29,24
3€ 43,86
4€ 58,48
5€ 73,10
6€ 87,72
7€ 102,34
8€ 116,96
9€ 131,58
10€ 146,20
11€ 160,82
12€ 175,44
13€ 190,06
14€ 204,68
15€ 219,30

€ 14,62

€ 14,62 Всеки (ex VAT)

STMicroelectronics Type N-Channel MOSFET, 45 A, 1200 V Enhancement, 3-Pin Hip-247 SCT30N120

Информацията за складовите наличности временно не е налична.

Изберете тип опаковка

Стандарт

Изберете тип опаковка

Стандарт - each

Предлагат се на бройка по 1.

Производство -

Предлагат се на бройка по 1.

Препоръчва се за поръчки в големи количества. Артикулите са опаковани готови за поставяне в машини, което Ви позволява да подобрите ефективността на производството.

1

Предлагат се на бройка по 1
1€ 14,62
2€ 29,24
3€ 43,86
4€ 58,48
5€ 73,10
6€ 87,72
7€ 102,34
8€ 116,96
9€ 131,58
10€ 146,20
11€ 160,82
12€ 175,44
13€ 190,06
14€ 204,68
15€ 219,30

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

45A

Maximum Drain Source Voltage Vds

1200V

Package Type

Hip-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

100mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

105nC

Maximum Power Dissipation Pd

270W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

3.5V

Maximum Operating Temperature

200°C

Length

15.75mm

Height

20.15mm

Standards/Approvals

No

Automotive Standard

No

Детайли за продукта

N-Channel Silicon Carbide (SiC) MOSFET, STMicroelectronics

Silicon carbide (SiC) MOSFETs feature very low static drain-source on-resistance for the 1200V rating combined with excellent switching performance, translating into more efficient and compact systems.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more