STMicroelectronics SiC MOSFET SiC N-Channel MOSFET, 20 A, 1200 V, 3-Pin H2PAK-2 SCT20N120H

Номер на артикул на RS: 201-4415Марка: STMicroelectronics№ по каталога на производителя: SCT20N120H
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Технически документи

Спецификации

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

1200 V

Series

SiC MOSFET

Package Type

H2PAK-2

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.203 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

239V

Number of Elements per Chip

1

Transistor Material

SiC

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Информацията за складовите наличности временно не е налична.

€ 10 008,56

€ 10,009 Each (On a Reel of 1000) (ex VAT)

STMicroelectronics SiC MOSFET SiC N-Channel MOSFET, 20 A, 1200 V, 3-Pin H2PAK-2 SCT20N120H

1000

Предлагат се на бройка по 1000
1000€ 10 008,56
2000€ 20 017,13
3000€ 30 025,69
4000€ 40 034,25
5000€ 50 042,82
6000€ 60 051,38
7000€ 70 059,94
8000€ 80 068,50
9000€ 90 077,07
10000€ 100 085,63
11000€ 110 094,19
12000€ 120 102,76
13000€ 130 111,32
14000€ 140 119,88
15000€ 150 128,44

€ 10 008,56

€ 10,009 Each (On a Reel of 1000) (ex VAT)

STMicroelectronics SiC MOSFET SiC N-Channel MOSFET, 20 A, 1200 V, 3-Pin H2PAK-2 SCT20N120H

Информацията за складовите наличности временно не е налична.

1000

Предлагат се на бройка по 1000
1000€ 10 008,56
2000€ 20 017,13
3000€ 30 025,69
4000€ 40 034,25
5000€ 50 042,82
6000€ 60 051,38
7000€ 70 059,94
8000€ 80 068,50
9000€ 90 077,07
10000€ 100 085,63
11000€ 110 094,19
12000€ 120 102,76
13000€ 130 111,32
14000€ 140 119,88
15000€ 150 128,44

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

1200 V

Series

SiC MOSFET

Package Type

H2PAK-2

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.203 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

239V

Number of Elements per Chip

1

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more