SiC N-Channel MOSFET Module, 12 A, 1200 V Depletion, 3-Pin HiP247 STMicroelectronics SCT10N120

Номер на артикул на RS: 202-5475Марка: STMicroelectronics№ по каталога на производителя: SCT10N120
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

1200 V

Series

SCT

Package Type

Hip247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.58 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

3.5V

Number of Elements per Chip

1

Transistor Material

SiC

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Информацията за складовите наличности временно не е налична.

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Информацията за складовите наличности временно не е налична.

€ 6,686

Each (In a Tube of 30) (ex VAT)

SiC N-Channel MOSFET Module, 12 A, 1200 V Depletion, 3-Pin HiP247 STMicroelectronics SCT10N120

€ 6,686

Each (In a Tube of 30) (ex VAT)

SiC N-Channel MOSFET Module, 12 A, 1200 V Depletion, 3-Pin HiP247 STMicroelectronics SCT10N120
Информацията за складовите наличности временно не е налична.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

1200 V

Series

SCT

Package Type

Hip247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.58 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

3.5V

Number of Elements per Chip

1

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more