STMicroelectronics SCT Type N-Channel MOSFET, 60 A, 650 V Enhancement, 7-Pin H2PAK-7

Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
60A
Maximum Drain Source Voltage Vds
650V
Package Type
H2PAK-7
Series
SCT
Mount Type
Surface
Pin Count
7
Maximum Drain Source Resistance Rds
29mΩ
Channel Mode
Enhancement
Forward Voltage Vf
2.9V
Maximum Power Dissipation Pd
300W
Maximum Gate Source Voltage Vgs
22 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
48.6nC
Maximum Operating Temperature
175°C
Length
15.25mm
Standards/Approvals
RoHS, AEC-Q101
Width
10.4 mm
Height
4.8mm
Automotive Standard
AEC-Q101
Страна на произход
China
Информацията за складовите наличности временно не е налична.
Запитване за цена
Производствен пакет (Ролка)
1
Запитване за цена
Информацията за складовите наличности временно не е налична.
Производствен пакет (Ролка)
1
Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
60A
Maximum Drain Source Voltage Vds
650V
Package Type
H2PAK-7
Series
SCT
Mount Type
Surface
Pin Count
7
Maximum Drain Source Resistance Rds
29mΩ
Channel Mode
Enhancement
Forward Voltage Vf
2.9V
Maximum Power Dissipation Pd
300W
Maximum Gate Source Voltage Vgs
22 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
48.6nC
Maximum Operating Temperature
175°C
Length
15.25mm
Standards/Approvals
RoHS, AEC-Q101
Width
10.4 mm
Height
4.8mm
Automotive Standard
AEC-Q101
Страна на произход
China

