STMicroelectronics Sct N channel-Channel Power MOSFET, 56 A, 1200 V Enhancement, 4-Pin Hip-247-4 SCT025W120G3-4

Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
Power MOSFET
Channel Type
N channel
Maximum Continuous Drain Current Id
56A
Maximum Drain Source Voltage Vds
1200V
Package Type
Hip-247-4
Series
SCT
Mount Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance Rds
27mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
73nC
Maximum Power Dissipation Pd
388W
Maximum Gate Source Voltage Vgs
22 V
Minimum Operating Temperature
-55°C
Forward Voltage Vf
2.7V
Maximum Operating Temperature
175°C
Width
5.1 mm
Length
15.9mm
Height
25.27mm
Страна на произход
China
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Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
Power MOSFET
Channel Type
N channel
Maximum Continuous Drain Current Id
56A
Maximum Drain Source Voltage Vds
1200V
Package Type
Hip-247-4
Series
SCT
Mount Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance Rds
27mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
73nC
Maximum Power Dissipation Pd
388W
Maximum Gate Source Voltage Vgs
22 V
Minimum Operating Temperature
-55°C
Forward Voltage Vf
2.7V
Maximum Operating Temperature
175°C
Width
5.1 mm
Length
15.9mm
Height
25.27mm
Страна на произход
China

