STMicroelectronics SCT N channel-Channel Power MOSFET, 55 A, 650 V Enhancement, 3-Pin HIP-247-3 SCT018W65G3AG

Номер на артикул на RS: 719-468Марка: STMicroelectronics№ по каталога на производителя: SCT018W65G3AG
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Преглед на всички в MOSFETs

Технически документи

Спецификации

Brand

STMicroelectronics

Product Type

Power MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

55A

Maximum Drain Source Voltage Vds

650V

Package Type

HIP-247-3

Series

SCT

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

27mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

398W

Maximum Gate Source Voltage Vgs

22 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

76nC

Forward Voltage Vf

2.6V

Maximum Operating Temperature

200°C

Width

5.15 mm

Height

20.15mm

Length

15.75mm

Automotive Standard

AEC-Q101

Страна на произход

China

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Преглед на всички в MOSFETs

Информацията за складовите наличности временно не е налична.

€ 15,03

€ 15,03 Всеки (ex VAT)

STMicroelectronics SCT N channel-Channel Power MOSFET, 55 A, 650 V Enhancement, 3-Pin HIP-247-3 SCT018W65G3AG

1

Предлагат се на бройка по 1
1€ 15,03
2€ 30,06
3€ 45,09
4€ 60,12
5€ 72,87
6€ 87,45
7€ 102,02
8€ 116,59
9€ 131,17
10€ 145,74
11€ 160,32
12€ 174,89
13€ 189,47
14€ 204,04
15€ 218,61

€ 15,03

€ 15,03 Всеки (ex VAT)

STMicroelectronics SCT N channel-Channel Power MOSFET, 55 A, 650 V Enhancement, 3-Pin HIP-247-3 SCT018W65G3AG

Информацията за складовите наличности временно не е налична.

1

Предлагат се на бройка по 1
1€ 15,03
2€ 30,06
3€ 45,09
4€ 60,12
5€ 72,87
6€ 87,45
7€ 102,02
8€ 116,59
9€ 131,17
10€ 145,74
11€ 160,32
12€ 174,89
13€ 189,47
14€ 204,04
15€ 218,61

количествоЕдинична цена
1 - 4€ 15,03
5+€ 14,57

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

STMicroelectronics

Product Type

Power MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

55A

Maximum Drain Source Voltage Vds

650V

Package Type

HIP-247-3

Series

SCT

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

27mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

398W

Maximum Gate Source Voltage Vgs

22 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

76nC

Forward Voltage Vf

2.6V

Maximum Operating Temperature

200°C

Width

5.15 mm

Height

20.15mm

Length

15.75mm

Automotive Standard

AEC-Q101

Страна на произход

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more