STMicroelectronics SCT Type N-Channel MOSFET, 55 A, 650 V Enhancement, 7-Pin H2PAK-7

Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
55A
Maximum Drain Source Voltage Vds
650V
Package Type
H2PAK-7
Series
SCT
Mount Type
Through Hole
Pin Count
7
Maximum Drain Source Resistance Rds
27mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
79.4nC
Maximum Power Dissipation Pd
385W
Maximum Gate Source Voltage Vgs
22 V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
75°C
Standards/Approvals
RoHS
Automotive Standard
AEC-Q101
Страна на произход
China
Информацията за складовите наличности временно не е налична.
€ 16,20
€ 16,20 Всеки (ex VAT)
Стандарт
1
€ 16,20
€ 16,20 Всеки (ex VAT)
Информацията за складовите наличности временно не е налична.
Стандарт
1
| количество | Единична цена |
|---|---|
| 1 - 9 | € 16,20 |
| 10 - 99 | € 14,59 |
| 100+ | € 13,44 |
Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
55A
Maximum Drain Source Voltage Vds
650V
Package Type
H2PAK-7
Series
SCT
Mount Type
Through Hole
Pin Count
7
Maximum Drain Source Resistance Rds
27mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
79.4nC
Maximum Power Dissipation Pd
385W
Maximum Gate Source Voltage Vgs
22 V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
75°C
Standards/Approvals
RoHS
Automotive Standard
AEC-Q101
Страна на произход
China

