STMicroelectronics Sct N channel-Channel Power MOSFET, 110 A, 900 V Enhancement, 3-Pin HIP-247-3 SCT012W90G3AG

Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
Power MOSFET
Channel Type
N channel
Maximum Continuous Drain Current Id
110A
Maximum Drain Source Voltage Vds
900V
Package Type
HIP-247-3
Series
SCT
Mount Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance Rds
12mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
625W
Maximum Gate Source Voltage Vgs
22 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
138nC
Forward Voltage Vf
2.8V
Maximum Operating Temperature
200°C
Width
5.15 mm
Height
20.15mm
Length
15.75mm
Automotive Standard
AEC-Q101
Страна на произход
China
Информацията за складовите наличности временно не е налична.
€ 18,74
€ 18,74 Всеки (ex VAT)
1
€ 18,74
€ 18,74 Всеки (ex VAT)
Информацията за складовите наличности временно не е налична.
1
| количество | Единична цена |
|---|---|
| 1 - 4 | € 18,74 |
| 5+ | € 18,18 |
Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
Power MOSFET
Channel Type
N channel
Maximum Continuous Drain Current Id
110A
Maximum Drain Source Voltage Vds
900V
Package Type
HIP-247-3
Series
SCT
Mount Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance Rds
12mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
625W
Maximum Gate Source Voltage Vgs
22 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
138nC
Forward Voltage Vf
2.8V
Maximum Operating Temperature
200°C
Width
5.15 mm
Height
20.15mm
Length
15.75mm
Automotive Standard
AEC-Q101
Страна на произход
China

