STMicroelectronics N-Channel MOSFET, 2 A, 40 V, 3-Pin SOT-89 PD85004

Номер на артикул на RS: 880-5355Марка: STMicroelectronics№ по каталога на производителя: PD85004
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

2 A

Maximum Drain Source Voltage

40 V

Package Type

SOT-89

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.9V

Maximum Power Dissipation

6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-0.5 V, +15 V

Width

2.6mm

Transistor Material

Si

Number of Elements per Chip

1

Length

4.6mm

Maximum Operating Temperature

+150 °C

Height

0.44mm

Typical Power Gain

17 dB

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Запитване за цена

Each (In a Pack of 5) (ex VAT)

STMicroelectronics N-Channel MOSFET, 2 A, 40 V, 3-Pin SOT-89 PD85004
Изберете тип опаковка

Запитване за цена

Each (In a Pack of 5) (ex VAT)

STMicroelectronics N-Channel MOSFET, 2 A, 40 V, 3-Pin SOT-89 PD85004

Информацията за складовите наличности временно не е налична.

Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

2 A

Maximum Drain Source Voltage

40 V

Package Type

SOT-89

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.9V

Maximum Power Dissipation

6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-0.5 V, +15 V

Width

2.6mm

Transistor Material

Si

Number of Elements per Chip

1

Length

4.6mm

Maximum Operating Temperature

+150 °C

Height

0.44mm

Typical Power Gain

17 dB

Детайли за продукта

RF MOSFET Transistors, STMicroelectronics

The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more