Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
40 V
Package Type
PowerSO
Mounting Type
Surface Mount
Pin Count
10
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
73 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+165 °C
Length
9.6mm
Width
9.5mm
Transistor Material
Si
Typical Power Gain
14 dB
Height
3.6mm
Детайли за продукта
RF MOSFET Transistors, STMicroelectronics
The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.
MOSFET Transistors, STMicroelectronics
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 20,24
Всеки (ex VAT)
Стандарт
1
€ 20,24
Всеки (ex VAT)
Стандарт
1
Купете в насипно състояние
количество | Единична цена |
---|---|
1 - 4 | € 20,24 |
5 - 9 | € 19,02 |
10 - 24 | € 18,03 |
25 - 49 | € 16,98 |
50+ | € 16,56 |
Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
40 V
Package Type
PowerSO
Mounting Type
Surface Mount
Pin Count
10
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
73 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+165 °C
Length
9.6mm
Width
9.5mm
Transistor Material
Si
Typical Power Gain
14 dB
Height
3.6mm
Детайли за продукта
RF MOSFET Transistors, STMicroelectronics
The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.