Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
200 V
Series
STripFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
400 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
75 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
31 nC @ 10 V
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+150 °C
Height
9.15mm
Minimum Operating Temperature
-65 °C
Детайли за продукта
N-Channel STripFET™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Информацията за складовите наличности временно не е налична.
€ 7,08
€ 1,416 Each (In a Pack of 5) (ex VAT)
Стандарт
5
€ 7,08
€ 1,416 Each (In a Pack of 5) (ex VAT)
Информацията за складовите наличности временно не е налична.
Стандарт
5
| количество | Единична цена | Per Опаковка |
|---|---|---|
| 5 - 20 | € 1,416 | € 7,08 |
| 25 - 45 | € 1,347 | € 6,74 |
| 50 - 120 | € 1,213 | € 6,06 |
| 125 - 245 | € 1,089 | € 5,45 |
| 250+ | € 1,034 | € 5,17 |
Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
200 V
Series
STripFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
400 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
75 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
31 nC @ 10 V
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+150 °C
Height
9.15mm
Minimum Operating Temperature
-65 °C
Детайли за продукта



