Технически документи
Спецификации
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
8 A
Maximum Collector Emitter Voltage
450 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
85 W
Minimum DC Current Gain
5
Transistor Configuration
Single
Maximum Collector Base Voltage
800 V
Maximum Emitter Base Voltage
9 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
9.15 x 10.4 x 4.6mm
Детайли за продукта
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
Информацията за складовите наличности временно не е налична.
Запитване за цена
Each (Supplied in a Tube) (ex VAT)
Производствен пакет (Тръба)
5
Запитване за цена
Each (Supplied in a Tube) (ex VAT)
Информацията за складовите наличности временно не е налична.
Производствен пакет (Тръба)
5
Технически документи
Спецификации
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
8 A
Maximum Collector Emitter Voltage
450 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
85 W
Minimum DC Current Gain
5
Transistor Configuration
Single
Maximum Collector Base Voltage
800 V
Maximum Emitter Base Voltage
9 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
9.15 x 10.4 x 4.6mm
Детайли за продукта
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.


