Технически документи
Спецификации
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
5 A
Maximum Collector Emitter Voltage
400 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
80 W
Minimum DC Current Gain
8
Transistor Configuration
Single
Maximum Collector Base Voltage
800 V
Maximum Emitter Base Voltage
9 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
9.15 x 10.4 x 4.6mm
Maximum Operating Temperature
+150 °C
Детайли за продукта
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 1,137
Each (In a Tube of 75) (ex VAT)
75
€ 1,137
Each (In a Tube of 75) (ex VAT)
75
Купете в насипно състояние
количество | Единична цена | Per Тръба |
---|---|---|
75 - 75 | € 1,137 | € 85,26 |
150 - 300 | € 0,853 | € 63,94 |
375+ | € 0,767 | € 57,54 |
Технически документи
Спецификации
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
5 A
Maximum Collector Emitter Voltage
400 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
80 W
Minimum DC Current Gain
8
Transistor Configuration
Single
Maximum Collector Base Voltage
800 V
Maximum Emitter Base Voltage
9 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
9.15 x 10.4 x 4.6mm
Maximum Operating Temperature
+150 °C
Детайли за продукта
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.