STMicroelectronics BU508AW NPN Transistor, 8 A, 700 V, 3-Pin TO-247

Номер на артикул на RS: 714-6746Марка: STMicroelectronics№ по каталога на производителя: BU508AW
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Технически документи

Спецификации

Transistor Type

NPN

Maximum DC Collector Current

8 A

Maximum Collector Emitter Voltage

700 V

Package Type

TO-247

Mounting Type

Through Hole

Maximum Power Dissipation

125 W

Minimum DC Current Gain

10

Transistor Configuration

Single

Maximum Emitter Base Voltage

9 V

Pin Count

3

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Dimensions

20.15 x 15.75 x 5.15mm

Детайли за продукта

High Voltage Transistors, STMicroelectronics

Bipolar Transistors, STMicroelectronics

A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.

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Информацията за складовите наличности временно не е налична.

€ 7,21

€ 3,607 Each (In a Pack of 2) (ex VAT)

STMicroelectronics BU508AW NPN Transistor, 8 A, 700 V, 3-Pin TO-247
Изберете тип опаковка

€ 7,21

€ 3,607 Each (In a Pack of 2) (ex VAT)

STMicroelectronics BU508AW NPN Transistor, 8 A, 700 V, 3-Pin TO-247
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

количествоЕдинична ценаPer Опаковка
2 - 8€ 3,607€ 7,21
10 - 98€ 3,063€ 6,13
100 - 248€ 2,451€ 4,90
250 - 498€ 2,324€ 4,65
500+€ 2,173€ 4,35

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Transistor Type

NPN

Maximum DC Collector Current

8 A

Maximum Collector Emitter Voltage

700 V

Package Type

TO-247

Mounting Type

Through Hole

Maximum Power Dissipation

125 W

Minimum DC Current Gain

10

Transistor Configuration

Single

Maximum Emitter Base Voltage

9 V

Pin Count

3

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Dimensions

20.15 x 15.75 x 5.15mm

Детайли за продукта

High Voltage Transistors, STMicroelectronics

Bipolar Transistors, STMicroelectronics

A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more